Manufactured from elemental silicon through oxygen-enriched combustion, gasification and condensation, followed by surface treatment.
High purity, high spheroidization rate.
Low dielectric loss. Low content of large balls.
Recommended application: HDI boards, IC substrates, FCCL, LCP materials and ABF films.
Manufactured from elemental silicon through oxygen-enriched combustion, gasification and condensation, followed by surface treatment.
High purity, high spheroidization rate.
Low dielectric loss. Low content of large balls.
Recommended application: HDI boards, IC substrates, FCCL, LCP materials and ABF films.
Typical data
|
Test Items |
Unit |
DB |
Test Method |
|
|
Particle Size |
D50 |
μm |
1.0-3.0 |
Laser particle size analyzer |
|
D99 |
μm |
3.5-8.0 |
||
|
Chemical Composition (SiO2) |
% |
99.9 |
XRF |
|
|
pH |
—— |
6.5 |
Acid Base Detector |
|
|
SSA |
㎡/g |
8.2 |
SSA Analyzer |
|
|
Spheroidization Rate |
% |
99.0 |
SEM |
|
|
tanδ |
—— |
0.0017 (10GHz) |
Paraffin Compression Method |
|
|
CTE |
ppm/℃ |
0.50 |
Theoretical Value |
|
Typical data
|
Test Items |
Unit |
DB |
Test Method |
|
|
Particle Size |
D50 |
μm |
1.0-3.0 |
Laser particle size analyzer |
|
D99 |
μm |
3.5-8.0 |
||
|
Chemical Composition (SiO2) |
% |
99.9 |
XRF |
|
|
pH |
—— |
6.5 |
Acid Base Detector |
|
|
SSA |
㎡/g |
8.2 |
SSA Analyzer |
|
|
Spheroidization Rate |
% |
99.0 |
SEM |
|
|
tanδ |
—— |
0.0017 (10GHz) |
Paraffin Compression Method |
|
|
CTE |
ppm/℃ |
0.50 |
Theoretical Value |
|